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We recently added a new application note on our web; "Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography" >>> < More >
May I also invite you to view our blog where a new article has been posted on the "Inhomogeneity of a highly efficient InGaN based blue LED studied by 3D atom probe tomography".
The InGaN based multiple quantum well (MQW) structure in a commercially available white light emitting diode (LED) was studied by transmission electron microscopy (TEM) and three-dimensional atom probe tomography (APT). The average In mole fraction by three-dimensional (3D) APT was found to be about 18% in the InGaN well which is consistent with the secondary ion mass spectrometry (SIMS) analysis.
The In distribution in the InGaN well layer was analyzed by the iso curve mapping of 3D APT and found to be nonuniform in the InGaN active layer. In clustering or In rich regions in the range of 2?3 nm size were found, in contrast to recent reports. Our results thus indicate that In clustering is essential for high-brightness InGaN based LEDs. We have also observed a discontinuity in the range of 50?100.
Group III-nitride semiconductors have been recognized as very important materials for opto-electronic devices such as light emitting diodes (LEDs) and laser diodes (LDs) for applications in the visible and ultra-violet (UV) regions. To produce highly efficient light emission in LEDs, it is important to realize pure and almost perfect semiconductor materials in epitaxial growth. In most LED materials, it is desirable to have dislocation densities.....
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